Published January 2014 | Version v1
Journal article

Investigations of nanocrystalline SnS films' surface morphology modification during inductively coupled argon plasma sputtering

  • 1. Microelectronics Department, Yaroslavl State University, Sovetskaya Street 14, Yaroslavl 150000 (Russian Federation)
  • 2. Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, Universitetskaya Street 21, Yaroslavl 150007 (Russian Federation)
  • 3. Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus, P. Brovka Street 19, Minsk 220072 (Belarus)

Description

In this work the investigations of the morphology, structure and chemical composition of nanocrystalline SnS films grown by hot wall deposition method on glass substrates before and after high-density low-pressure inductively coupled argon plasma sputtering were performed using scanning electron microscopy, x-ray diffraction analysis, Raman spectroscopy, and energy-dispersive x-ray spectroscopy. The phenomenon of the surface smoothing for the SnS films with petal-like nanocrystallites during plasma treatment is described and the low sputtering rate for the studied films is discussed. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/29/1/015009

Additional details

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
29
Journal Issue
1
Journal Page Range
[6 p.]
ISSN
0268-1242
CODEN
SSTEET