Published 1975 | Version v1
Book

Low temperature deposition of metal nitrides by thermal decomposition of organometallic compounds

  • 1. Gifu Univ., Kagamigahara, Japan

Description

Decomposition reaction of dialkylamides of boron, silicon, tin, titanium, zirconium, niobium, and tantalum was investigated. The amides of transition metals decomposed to the corresponding nitrides at 300--5000C, although those of a typical group afforded elements themselves at higher temperatures in most cases. In the temperature dependence of the nitride deposition from tetrakis (dimethylamido)titanium(IV), two optimum temperature conditions were found at 4000C and at a temperature higher than 8000C in nitrogen or hydrogen atmosphere, but in argon low temperature deposition alone was possible. The low and high temperature processes are discussed in relation with the mass spectral analysis of the exhaust gases formed at the different temperature decompositions of the titanium amide

Additional details

Publishing Information

Publisher
The Electrochemical Society, Inc.
Imprint Place
Princeton, NJ
Imprint Title
Chemical vapor deposition
Imprint Pagination
p. 147-160.

Conference

Title
5. international conference on chemistry vapor deposition.
Dates
21 Sep 1975.
Place
Burkinghamshire, UK.

Optional Information

Notes
Imprint:See CONF-750991--.