Published March 29, 2012 | Version v1
Journal article Metadata-only

Study of the charge transport mechanism in pulsed laser deposited AlN:Si films

Creators

  • 1. Technical University of Sofia, 8, St. Kliment Ohridski Blvd., 1000 Sofia (Bulgaria)
  • 2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72, Tsarigradsko Chaussee, 1784 Sofia (Bulgaria)
  • 3. Eotvos Lorand University, Department of Materials Physics, 1/A Pazmany Peter setany, 1117 Budapest (Hungary)
  • 4. National Institute for Lasers, Plasma, and Radiation Physics, PO Box MG-54, RO-77125, Magurele, Ilfov (Romania)

Description

AlN films doped with Si (AlN:Si) were synthesized on p-Si(100) substrates by pulsed laser deposition. Al-AlN:Si-Si metal-insulator-silicon (MIS) structures were formed and their current-voltage characteristics measured at 77 K and 290 K were analyzed. The results revealed that the charge transport is carried through the AlN:Si-Si MIS structures by the mechanism of trap space charge limited current.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/356/1/012038

Additional details

Identifiers

DOI
10.1088/1742-6596/356/1/012038;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
356
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
17. international summer school on vacuum, electron, and ion technologies
Acronym
VEIT 2011
Dates
19-23 Sep 2011
Place
Sunny Beach (Bulgaria)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43104834
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM; ALUMINIUM NITRIDES; CHARGE TRANSPORT; CRYSTAL STRUCTURE; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ENERGY BEAM DEPOSITION; LASER RADIATION; P-TYPE CONDUCTORS; PULSED IRRADIATION; SILICON; SPACE CHARGE; SUBSTRATES; TEMPERATURE DEPENDENCE; TRAPS
Descriptors DEC
ALUMINIUM COMPOUNDS; DEPOSITION; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; IRRADIATION; MATERIALS; METALS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SURFACE COATING