Published March 2006 | Version v1
Journal article

Optically pumped ultraviolet lasing of BeMgZnSe based quantum well laser structures

  • 1. Department of Information Processing, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502 (Japan)

Description

Ultraviolet lasing by optically pumping from BeMgZnSe quantum well laser structures on GaP(001) substrate was demonstrated using molecular beam epitaxy (MBE). The lasing wavelength was 373 nm at 13 K. The threshold power density at 13 K was 415 kW/cm2. In addition, the characteristic temperature from 13 to 90 K was 87 K. The lasing was confirmed up to 130 K. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200564684

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
3
Journal Issue
4
Journal Page Range
p. 878-880
ISSN
1610-1634

Conference

Title
12. international conference on II-VI compounds
Dates
12-16 Sep 2005
Place
Warsaw (Poland)

Optional Information

Notes
With 3 figs., 10 refs.. SICI: 1610-1634(200603)3:4<878::AID-PSSC200564684>3.0.TX;2-H