Published December 1, 2013 | Version v1
Journal article

Challenges for silicon pixel sensors at the European XFEL

  • 1. Institute for Experimental Physics, University of Hamburg, Hamburg (Germany)
  • 2. DESY, Hamburg (Germany)
  • 3. National Institute of Materials Physics, Magurele (Romania)

Description

A systematic experimental study of the main challenges for silicon-pixel sensors at the European XFEL is presented. The high instantaneous density of X-rays and the high repetition rate of the XFEL pulses result in signal distortions due to the plasma effect and in severe radiation damage. The main parameters of X-ray-radiation damage have been determined and their impact on p+n sensors is investigated. These studies form the basis of the optimized design of a pixel-sensor for experimentation at the European XFEL

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nima.2013.05.166

Additional details

Identifiers

DOI
10.1016/j.nima.2013.05.166;
arXiv
arXiv:1212.5045v1;
PII
S0168-9002(13)00780-8;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
730
Journal Page Range
p. 2-7
ISSN
0168-9002
CODEN
NIMAER

Conference

Title
9. international conference on radiation effects on semiconductor materials detectors and devices
Dates
9-12 Oct 2012
Place
Florence (Italy)

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.