Published July 1981
| Version v1
Journal article
Effect of charge exchange processes in deep impurity levels on semi-insulating gallium arsenide photoconductivity and electroabsorption
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Влияние процессов перезарядки глубоких примесных уровней на фотопроводимост' и электропоглощение полуизолирующего арсенида галлия
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 15
- Journal Issue
- 7
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1448
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 13660352
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ENERGY LEVELS; ENERGY SPECTRA; GALLIUM ARSENIDES; IMPURITIES; IONIZATION; LOW TEMPERATURE; PHOTOCONDUCTIVITY; VISIBLE RADIATION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SPECTRA
Optional Information
- Notes
- Short note; for English translation see the journal Soviet Physics - Semiconductors (USA).