Ion implantation and annealing

Ion implantation has emerged in recent years as a common technique to dope semiconductors for integrated-circuit production. Some advantages of ion implantation are discussed in this chapter as are applications. The ion-implantation field is briefly reviewed, however the key problem addressed is the annealing process. Damage created by the ions must be removed and the implanted species must be electrically activated. Sections presented include discussions on ion implanters, range distribution, and ion damage. Methods of annealing which are examined are furnace annealing, rapid thermal annealing, and laser annealing