Advances in understanding of transparent conducting oxides
Creators
- 1. Engineering Dept, Cambridge University, Cambridge CB2 1PZ (United Kingdom)
- 2. Physics Dept, Durham University, South Road, Durham DH1 3LE (United Kingdom)
Description
The band structures of some transparent conducting oxides are calculated using the screened exchange hybrid functional. The optical properties and band gaps of the CuAlO2 defossalite family follow the expected chemical trends. The limits to the doping of n- and p-type oxides are examined in terms of the dopant compensation by native defects. The accessible range of the Fermi energy under doping is that for which compensating native defects have a positive formation energy. These energy limits are aligned on a band offset diagram. N-dopable oxides have a conduction band minimum that lies deep below the vacuum level, while p-dopable oxides have a valence band top that lies high towards the vacuum level. The nature of electron conduction in amorphous InGaZnOx type oxides is discussed, in terms of the nature of localisation and the density of states at the mobility edge.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2011.10.063Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2011.10.063;
- PII
- S0040-6090(11)01803-7;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 520
- Journal Issue
- 10
- Journal Page Range
- p. 3714-3720
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 7. international symposium on transparent oxide thin films for electronics and optics
- Acronym
- TOEO-7
- Dates
- 14-16 Mar 2011
- Place
- Tokyo (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43098461
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DEFECTS; DENSITY; ELECTRONS; FIELD EFFECT TRANSISTORS; FORMATION HEAT; MOBILITY; OPTICAL PROPERTIES; TIN OXIDES; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELEMENTARY PARTICLES; ENTHALPY; FERMIONS; LEPTONS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REACTION HEAT; SEMICONDUCTOR DEVICES; THERMODYNAMIC PROPERTIES; TIN COMPOUNDS; TRANSISTORS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.