Published March 1, 2012 | Version v1
Journal article

Advances in understanding of transparent conducting oxides

  • 1. Engineering Dept, Cambridge University, Cambridge CB2 1PZ (United Kingdom)
  • 2. Physics Dept, Durham University, South Road, Durham DH1 3LE (United Kingdom)

Description

The band structures of some transparent conducting oxides are calculated using the screened exchange hybrid functional. The optical properties and band gaps of the CuAlO2 defossalite family follow the expected chemical trends. The limits to the doping of n- and p-type oxides are examined in terms of the dopant compensation by native defects. The accessible range of the Fermi energy under doping is that for which compensating native defects have a positive formation energy. These energy limits are aligned on a band offset diagram. N-dopable oxides have a conduction band minimum that lies deep below the vacuum level, while p-dopable oxides have a valence band top that lies high towards the vacuum level. The nature of electron conduction in amorphous InGaZnOx type oxides is discussed, in terms of the nature of localisation and the density of states at the mobility edge.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2011.10.063

Additional details

Identifiers

DOI
10.1016/j.tsf.2011.10.063;
PII
S0040-6090(11)01803-7;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
520
Journal Issue
10
Journal Page Range
p. 3714-3720
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
7. international symposium on transparent oxide thin films for electronics and optics
Acronym
TOEO-7
Dates
14-16 Mar 2011
Place
Tokyo (Japan)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43098461
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DEFECTS; DENSITY; ELECTRONS; FIELD EFFECT TRANSISTORS; FORMATION HEAT; MOBILITY; OPTICAL PROPERTIES; TIN OXIDES; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; ELEMENTARY PARTICLES; ENTHALPY; FERMIONS; LEPTONS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REACTION HEAT; SEMICONDUCTOR DEVICES; THERMODYNAMIC PROPERTIES; TIN COMPOUNDS; TRANSISTORS; ZINC COMPOUNDS

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.