Monte-Carlo simulation of defect annealing

A mathematical model of random flights of defects in an irradiated metal has been proposed. Migration of interstitial atoms at the substage Isub(E) of the first stage of annealing (electron irradiation) is analyzed on its basis. It is noted that the annealing process is affected by the initial concentration of interstitial-vacancy pairs, and by the presence of impurity traps. With increasing initial concentration of the interstitial-vacancy pairs, the process of their recombination becomes to resemble the process of correlated recombination at the substage Isub(D). With their high concentration, the impurity traps suppress completely the process of interstitial migration at the substage Isub(E)