Published August 2002
| Version v1
Journal article
Influence of structural defects in subsurface layers of silicon on charge carrier mobility in the channel of MOS-transistors threshold voltage
- 1. Odes'kij natsyional'nij unyiversitet, Odesa (Ukraine)
Description
The influence of structural imperfections, the impurity composition, and the doping inhomogeneity on the basic parameters of the I - V characteristics of MOS-transistors has been found out with aid of modern research methods. Oxygen and carbon are the basic impurities in initial and oxidized silicons. Oxygen reveals electrical activity and influences the parameters of structural defects that, in turn, affect the charge carrier mobility and the threshold voltage
Additional details
Additional titles
- Original title (Ukrainian)
- Vpliv strukturnikh defektyiv u pripoverkhnevikh sharakh kremnyiyu na rukhlivyist' nosyiyiv zaryadu v kanalyi MON-tranzistoryiv ta porogovu naprugu
Publishing Information
- Journal Title
- Ukrayins'kij Fyizichnij Zhurnal (Kiev)
- Journal Volume
- 47
- Journal Issue
- 8
- Journal Page Range
- p. 779-783
- ISSN
- 0372-400X
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 34010636
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARRIER MOBILITY; CHARGE CARRIERS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; MOS TRANSISTORS; SILICON; SURFACE PROPERTIES; TRACE AMOUNTS
- Descriptors DEC
- CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; MOBILITY; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS