Published May 2002 | Version v1
Journal article Metadata-only

Deep level spectra of MBE-grown ZnTe:Cr2+ layers

Creators

  • 1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 117924 (Russian Federation)
  • 2. Ryazan State Academy of Radio Engineering, Ryazan, 391000 (Russian Federation)

Description

ZnTe:Cr2+ layers grown by molecular beam epitaxy on (001) GaAs substrates and doped with chromium from a metallic source or CrI3 compound have been studied by current deep level transient spectroscopy (I-DLTS). The spectra of the layers show the presence of a deep level with an activation energy of (1.09 ± 0.03) eV, related to a center originating from an electric-field-induced Cr2+-Cr+ transition. Doping with chromium from CrI3 compound eliminates a number of point defects characteristic of ZnTe epitaxial layers, but leads to pronounced contamination of the grown films with iodine

Additional details

Identifiers

DOI
10.1134/1.1478537;

Publishing Information

Journal Title
Semiconductors
Journal Volume
36
Journal Issue
5
Journal Page Range
p. 493-495
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35052791
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
ACTIVATION ENERGY; CHROMIUM IODIDES; CHROMIUM IONS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPED MATERIALS; ELECTRONIC STRUCTURE; EV RANGE 01-10; EXPERIMENTAL DATA; LAYERS; MOLECULAR BEAM EPITAXY; POINT DEFECTS; ZINC TELLURIDES
Descriptors DEC
CHALCOGENIDES; CHARGED PARTICLES; CHROMIUM COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DATA; ENERGY; ENERGY RANGE; EPITAXY; EV RANGE; HALIDES; HALOGEN COMPOUNDS; INFORMATION; IODIDES; IODINE COMPOUNDS; IONS; MATERIALS; NUMERICAL DATA; SPECTROSCOPY; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 36, 525-527 (No. 5, 2002); (c) 2002 MAIK ''Nauka / Interperiodica''.