Published October 2017
| Version v1
Journal article
Quantum Hall effect in n-InGaAs/InAlAs metamorphic nanoheterostructures with high InAs content
Creators
- 1. M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620137 Yekaterinburg (Russian Federation)
- 2. Ural Federal University named after B.N. Yeltsin, 620002 Yekaterinburg (Russian Federation)
- 3. International Laboratory of High Magnetic Fields and Low Temperatures, Polish Academy of Sciences, Wroclaw (Poland)
- 4. National Research Nuclear University MEPhI, Kashirskoe Shosse, 31, 115409 Moscow (Russian Federation)
Description
For an investigation of the quantum Hall effect on n-In0.85Ga0.18As/In0.82Al0.82As metamorphic nanoheterostructures with high InAs content the longitudinal and Hall magnetoresistances were measured in magnetic fields up to 9 T at . The results for a temperature dependence of conductivity on the delocalized states at the center of Landau level were analysed within the scaling concept for a plateau-plateau transition in quantum Hall regime.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jmmm.2016.12.111Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2016.12.111;
- PII
- S030488531633030X;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 440
- Journal Page Range
- p. 10-12
- ISSN
- 0304-8853
- CODEN
- JMMMDC
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51055761
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- HALL EFFECT; INDIUM ARSENIDES; MAGNETIC FIELDS; QUANTUM WELLS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; INDIUM COMPOUNDS; NANOSTRUCTURES; PNICTIDES
Optional Information
- Notes
- © 2016 Elsevier B.V. All rights reserved.