Apparatus generating, selecting and energising laser ion and electron beams

Apparatus for generating, selecting and energising laser, ion and electron beams for the implantation and annealing of semiconductor wafers is claimed. It comprises: means for directing a laser pulse via an annular reflector and annular lens to focus on the surface of a rotatable target to produce a dense plasma composed of the ionized constituents of the target material; means for selecting the required charged particle species from the dense, laser produced plasma and directing these particles through the annular optical components coaxially, but in the opposite direction to the irradiating laser beam; means for accelerating and collimating selected charged particle species so that they impinge on a semiconductor wafer and either become implanted in it or dissipate their energy to anneal its implanted surface; and means for directing a second laser pulse onto the semiconductor wafer to anneal any implantation damage