New configurations for short-pulses high power solid-state lasers: conception and realization of highly doped waveguide amplifiers/lasers grown by liquid phase epitaxy and demonstration of Y2SiO5: Yb and Lu2SiO5: Yb femtosecond lasers
Description
Yb-doped yttrium and lutetium ortho-silicates, Y2SiO5:Yb and Lu2SiO5:Yb respectively, exhibit spectroscopic properties favorable to an efficient laser operation in both high power cw and femtosecond regime. Their first diode-pumped femtosecond operation demonstration lead to exceptional performances in terms of output power and efficiency. In order to realize compact and efficient solid-state laser devices using those materials, we chose a configuration with an Yb-doped medium planar waveguide geometry, grown by liquid phase epitaxy, face-pumped by a single laser diode bar. The growth of highly doped Y2SiO5:Yb layers, within a large range of compositions and thicknesses, was demonstrated. The refractive index increase due to the substitution of the various dopants is analyzed. The layers spectroscopic properties are similar to the bulk ones, with an noticeably higher crystalline quality. The Yb ion lifetime evolution with respect to its doping shows up a particularly low decrease, proof of a low concentration of extrinsic quenching centers. The covered YSO:24%Yb waveguides exhibit lower than 0.3 dB/cm propagation losses, and provided up to 2.9 dB/cm net amplification at 1082 nm with a single mode output. The realization of the first diode-pumped monolithic cw waveguide lasers was also demonstrated. For a 4% output coupler, they provided up to 340 mW at 1082 nm with a 14% slope efficiency. (author)
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Additional details
Additional titles
- Original title (French)
- Nouvelles structures pour lasers a impulsions breves de forte puissance: conception et realisation d'amplificateurs/lasers guides d'onde elabores par epitaxie en phase liquide et demonstration de lasers femtoseconde en Y
Identifiers
Publishing Information
- Imprint Pagination
- 208 p.
- Report number
- FRCEA-TH--1213
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 43099356
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- ABSORPTION; ANNEALING; CONCENTRATION RATIO; CRYSTAL DEFECTS; LIQUID PHASE EPITAXY; LUTETIUM SILICATES; MATHEMATICAL MODELS; RAMAN SPECTROSCOPY; REFRACTIVE INDEX; SOLID STATE LASERS; THICKNESS; THIN FILMS; VALIDATION; YTTERBIUM SILICATES
- Descriptors DEC
- CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIMENSIONLESS NUMBERS; DIMENSIONS; EPITAXY; FILMS; HEAT TREATMENTS; LASER SPECTROSCOPY; LASERS; LUTETIUM COMPOUNDS; OPTICAL PROPERTIES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; SILICATES; SILICON COMPOUNDS; SORPTION; SPECTROSCOPY; TESTING; YTTERBIUM COMPOUNDS
Optional Information
- Notes
- 156 refs.; Available from Bibliotheque universitaire de Paris 11, Domaine universitaire Batiment 407, 91405 - Orsay CEDEX (France) ; Also available from the INIS Liaison Officer for France, see the 'INIS contacts' section of the INIS website for current contact and E-mail addresses: http://www.iaea.org/INIS/contacts/