Proximity effect in flux pinning
Creators
- 1. Department of Materials Science and Engineering and the Materials Science Center, Cornell University, Ithaca, New York
Description
The elementary interaction force f/sub p/ for a small normal conducting precipitate particle is usually estimated assuming that the entire condensation energy of the superconductor 1/2 μ0H2/sub c/ is lost in the volume of the particle, i.e., that the particle is equivalent to a void. It is demonstrated that this assumption, which neglects the proximity effect, leads to a serious over estimate of f/sub p/, by as much as three orders of magnitude. The ratio of f/sub p/ of a normal precipitate to f/sub p/ of a void of the same volume is shown to be of the order (t/xi0)2, where t is the smallest dimension of the particle and xi0 is the BCS coherence length. In addition, the ratio is temperature dependent, becoming smaller (larger correction) as T approaches T/sub c/. These predictions are compared with recent experimental measurements of pinning by voids and precipitates and are shown to rationalize some hitherto puzzling experimental discrepancies between pinning by the two types of defects. Application of these ideas to flux pinning by other defects, such as grain boundaries and dislocations, is also discussed
Additional details
Publishing Information
- Journal Title
- J. Appl. Phys.
- Journal Volume
- 51
- Journal Issue
- 9
- Series
- J. Appl. Phys.
- Journal Page Range
- 4930-4938
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 12572590
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- BCS THEORY; COHERENCE LENGTH; COMPARATIVE EVALUATIONS; CRITICAL CURRENT; DATA; DISLOCATIONS; GRAIN BOUNDARIES; MAGNETIC FLUX; MATHEMATICAL MODELS; PROXIMITY EFFECT; SUPERCONDUCTIVITY; SUPERCONDUCTORS; TEMPERATURE DEPENDENCE; VOIDS
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CURRENTS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; INFORMATION; LINE DEFECTS; MICROSTRUCTURE; PHYSICAL PROPERTIES