Published December 2002
| Version v1
Journal article
MBE growth and photoluminescent properties of InAsSb/AlSbAs quantum wells
Creators
- 1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation)
- 2. Naval Research Laboratory, Washington DC, DC 20375 (United States)
Description
Heterostructures with a single InAs1-xSbx/AlSb1-yAsy quantum well (QW) on (001) GaSb substrates have been grown by MBE and studied using X-ray diffraction, transmission electron microscopy, and photoluminescence (PL) spectroscopy. High-intensity PL was observed at a temperature of 80 K, with a peak half-width of 30-50 meV and a peak wavelength in the range from 2 to 4.5 μm, depending on the QW width, which varied between 4 and 20 nm, respectively. The fundamental absorption edge of such QWs was calculated for a wide range of alloy compositions, x and y. Good correlation between the experimental and calculated dependences of the band gap on the InAsSb/AlSbAs QW thickness was obtained
Additional details
Identifiers
- DOI
- 10.1134/1.1529250;
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 36
- Journal Issue
- 12
- Journal Page Range
- p. 1385-1388
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35051957
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data, Translation
- Descriptors DEI
- ALUMINIUM ALLOYS; ANTIMONY ALLOYS; ARSENIC ALLOYS; EXPERIMENTAL DATA; GALLIUM ALLOYS; INDIUM ALLOYS; MICROSTRUCTURE; MILLI EV RANGE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM MECHANICS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0065-0273 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOYS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DATA; DIFFRACTION; ELECTRON MICROSCOPY; EMISSION; ENERGY RANGE; EPITAXY; INFORMATION; LUMINESCENCE; MATERIALS; MECHANICS; MICROSCOPY; NANOSTRUCTURES; NUMERICAL DATA; PHOTON EMISSION; SCATTERING; TEMPERATURE RANGE
Optional Information
- Notes
- Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 36, 1470-1474 (No. 12, 2002); (c) 2002 MAIK ''Nauka / Interperiodica''.