Published February 1996
| Version v1
Journal article
III-V diluted magnetic semiconductor: Substitutional doping of Mn in InAs
- 1. Department of Physics, State University of New York at Buffalo, Amherst, New York 14260 (United States)
- 2. Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama 226 (Japan)
- 3. Hong Kong University of Science and Technology, Kowloon (Hong Kong)
Description
Local structures around Mn in In1-xMnxAs films grown by molecular-beam epitaxy have been studied by using Mn K-edge extended x-ray-absorption fine-structure (EXAFS) technique. Substitution of Mn atoms for the In sites is found in samples either grown at low substrate temperatures (near 200 degree C) or with a low Mn concentration (about 1 at.%). This result represents a significant extension of an earlier EXAFS study and serves as direct experimental evidence for III-V diluted magnetic semiconductors obtained by substitutional doping of Mn impurities in InAs. copyright 1996 The American Physical Society
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter
- Journal Volume
- 53
- Journal Issue
- 8
- Journal Page Range
- p. 4905-4909.
- ISSN
- 0163-1829
- CODEN
- PRBMDO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27074485
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION SPECTRA; CRYSTAL GROWTH; CRYSTAL STRUCTURE; EPITAXY; FINE STRUCTURE; INDIUM ARSENIDES; MAGNETIC SEMICONDUCTORS; MAGNETORESISTANCE; MANGANESE ADDITIONS; SUBSTOICHIOMETRY; SYNCHROTRON RADIATION; THIN FILMS; X-RAY EMISSION ANALYSIS; X-RAY SPECTRA
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BREMSSTRAHLUNG; CHEMICAL ANALYSIS; CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; FILMS; INDIUM COMPOUNDS; MATERIALS; NONDESTRUCTIVE ANALYSIS; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SEMICONDUCTOR MATERIALS; SPECTRA