Published February 2005 | Version v1
Journal article Metadata-only

A non-ohmic conductance and the energy relaxation mechanisms of the 2D electron gas in GaAs/InGaAs/GaAs heterostructures

Creators

  • 1. Ural'skij Gosudarstvennyj Tekhnicheskij Univ., Ekaterinburg (Russian Federation)
  • 2. Nizhegorodskij Gosudarstvennyj Univ. im. N.I. Lobachevskogo, Nizhnij Novgorod (Russian Federation)

Description

Investigations of the heating of two-dimensional electron gas in GaAs/InGaAs/GaAs structures within the temperature range of 0.4-4 K and the electron concentration of (1.5-6) x 1015 m-2 have been carried out. It has been shown that the energy relaxation rate is in good agreement with theoretical predictions for the energy relaxation rate due to the electron scattering on piezoelectric and deformation potentials of acoustic phonons over the whole temperature and electron concentration ranges. It has been shown that the energy relaxation rate is the nonmonotone function on electron concentration

Abstract (Russian)

Проведено исследование разогрева двумерного электронного газа в структурах GaAs/InGaAs/GaAs в диапазоне температур 0.4-4 K и концентраций (1.5-6) x 1015 м-2. Показано, что скорость релаксации энергии хорошо описывается теоретическими выражениями для релаксации энергии при рассеянии на деформационном и пьезоэлектрическом потенциале акустических фононов во всем исследованном диапазоне температур и концентраций. Показано, что скорость релаксации энергии немонотонно зависит от концентрации электронов

Additional details

Additional titles

Original title (Russian)
Неомическая проводимост' и механизмы релаксации энергии 2D электронного газа в гетероструктурах GaAs/InGaAs/GaAs

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
39
Journal Issue
2
Journal Page Range
p. 237-241
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
38001923
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CARRIER DENSITY; ELECTRON GAS; GALLIUM ARSENIDES; HEATING; HETEROJUNCTIONS; INDIUM ARSENIDES; PHONONS; RELAXATION LOSSES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TWO-DIMENSIONAL CALCULATIONS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ENERGY LOSSES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LOSSES; PNICTIDES; QUASI PARTICLES; SEMICONDUCTOR JUNCTIONS; TEMPERATURE RANGE

Optional Information

Notes
13 refs., 4 figs.