Published June 15, 2003 | Version v1
Journal article

Ultraviolet-light-induced near-infrared photorefractivity and two-color holography in highly Mg-doped LiNbO3

  • 1. Department of Electronics Engineering, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585 (Japan)
  • 2. Department of Electronics Engineering, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan and Photonics Research Center, College of Physical Science, Nankai University, Tianjin 300071 (China)

Description

We investigate the ultraviolet (UV)-light-induced transient photorefractivity in a highly Mg-doped LiNbO3 crystal. The thermal activation energy of the UV-light-induced defect centers responsible for the induced transient photorefractivity was measured to be 0.65 eV and holes were found to be the major charge carriers. These results provide a solid basis for the model that intermediate states O- are the UV-light-induced defect centers in the crystal. We also demonstrate quasinondestructive two-color holography using UV-light-induced transient photorefractivity. The two-color recording sensitivity was measured to be as high as 0.05 cm/J with a recording intensity of 5 W/cm2 at 780 nm and a gating intensity of 0.47 W/cm2 at 365 nm

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
93
Journal Issue
12
Journal Page Range
p. 9456-9459
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
(c) 2003 American Institute of Physics.