Published October 27, 2014 | Version v1
Journal article

Intersubband light absorption in tunnel-coupled GaAs/AlGaAs quantum wells for electrooptic studies

  • 1. St Petersburg State Polytechnical University, St Petersburg 195251 (Russian Federation)
  • 2. Ioffe Physical-Technical Institute, St Petersburg 194021 (Russian Federation)

Description

Structures with doped multiple tunnel-coupled quantum wells GaAs/AlGaAs were grown. They were designed to investigate the intersubband absorption and modification of absorption spectra under transverse electric field. The samples were formed in mesa configuration. Preliminary results for the temperature modification of the intersubband absorption spectra were obtained

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/541/1/012081

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
541
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
1. international school and conference on optoelectronics, photonics, engineering and nanostructures
Acronym
OPEN 2014
Dates
25-27 Mar 2014
Place
St Petersburg (Russian Federation)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46082551
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ABSORPTION SPECTRA; ALUMINIUM ARSENIDES; DOPED MATERIALS; ELECTRIC FIELDS; GALLIUM ARSENIDES; QUANTUM WELLS; TEMPERATURE DEPENDENCE; TUNNEL EFFECT; VISIBLE RADIATION
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PNICTIDES; RADIATIONS; SPECTRA