Polarity-dependent reversible resistance switching in as-deposited AgInSbTe phase change film

The electrical properties of a nanoscale prototype capacitor-like cell structure using an amorphous Ag8In14Sb55Te23 (AIST) as the active material were investigated. A polarity-dependent reversible switching effect which is different from the amorphous-crystalline phase transformation has been observed. The reversible resistance switching between a high resistance state (HRS) and low resistance state (LRS) was induced by bias amplitude and polarity. The electrical resistance ratio of HRS/LRS was ∼10:1. The AIST phase change material is shown to be very promising for multi-state data storage applications.