Published June 1987
| Version v1
Journal article
Observation of ion-induced chemically bonded states of Auger LVV peak on a Si(111) surface
- 1. National Physical Lab., New Delhi (India)
Description
A clean polished Si(111) surface was exposed to a dust free atmosphere. The surface was then etched for known times by argon-ion sputtering. Examination by Auger electron spectroscopy revealed that surface impurities such as S and Mo are quickly eliminated but indicated that the argon-ion bombardment induces bonding of the silicon with oxygen and carbon. The bonding states are seen as position shifts and variations in the shape of the Si LVV Auger peak. (U.K.)
Additional details
Publishing Information
- Journal Title
- J. Mater. Sci. Lett.
- Journal Volume
- 6
- Journal Issue
- 6
- Series
- J. Mater. Sci. Lett.
- Journal Page Range
- 624-626
- CODEN
- JMSLD
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 18077673
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARGON IONS; AUGER ELECTRON SPECTROSCOPY; CARBON; CHEMICAL BONDS; ETCHING; IMPURITIES; OXYGEN; SILICON; SPUTTERING; SURFACE CLEANING
- Descriptors DEC
- CHARGED PARTICLES; CLEANING; ELECTRON SPECTROSCOPY; ELEMENTS; IONS; NONMETALS; SEMIMETALS; SPECTROSCOPY; SURFACE FINISHING