Published May 2003
| Version v1
Journal article
A variation in the lifetime of minor current carriers in the processes of irradiation and isochronous annealing in crystals p-Si
- 1. Gruzinskij tekhnicheskij universitet, Tbilisi (Georgia)
Description
Samples of p-type silicon irradiated with 8 MeV energy electrons have been studied. The comparison of the specific resistivity and lifetime of minor carriers τ under isochronous annealing testifies to the divacancies and K-centers are recombination-active up to Tann = 300 degree C and enables us to assume that, after annealing at 400 - 500 degree C, (V3 +O2) and (V3 +O3) complexes are responsible for alternation of τ, while V4, (V + B), (V3 + O) and (V3 +O2) are not recombination-active
Additional details
Additional titles
- Original title (Russian)
- Изменение времени жизни неосновных носителей тока в процессах облучения и изохронного отжига в кристаллах п-Си
Publishing Information
- Journal Title
- Ukrainskij Fizicheskij Zhurnal
- Journal Volume
- 48
- Journal Issue
- 5
- Journal Page Range
- p. 435-437
- ISSN
- 0202-3628
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 34062563
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CARRIER LIFETIME; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; MEV RANGE 01-10; P-TYPE CONDUCTORS; RADIATION DOSES; SILICON; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- DOSES; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; LIFETIME; MATERIALS; MEV RANGE; MOBILITY; PARTICLE MOBILITY; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SEMIMETALS; TEMPERATURE RANGE