Published June 11, 2003 | Version v1
Journal article

Nano-Microelectronics by Plasma and Electron Beam Techniques

  • 1. Plasma Physics Research Center, I.A.U. Tehran (Iran, Islamic Republic of)
  • 2. Faculty of Electr. Engineering, University of Applied Science, Deggendorf (Germany)
  • 3. Dept. Theoretical Physics, University of New South Wales, Sydney 2052 (Australia)

Description

For production of transistor electronics for lengths below the optical to ultraviolet wavelengths, technologies with plasmas and electron- ion- and neutral beams are studies where a combination with laser driven ion beam sources is involved. The same can be used for production of p-n junctions in silicon, gallium arsenide or conducting polymers diodes and solar cells

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
669
Journal Issue
1
Journal Page Range
p. 327-329
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
11. international congress on plasma physics
Acronym
ICPP 2002
Dates
15-19 Jul 2002
Place
Sydney (Australia)

Optional Information

Notes
(c) 2003 American Institute of Physics