Study of Internal Morphology on Preparation of Cu2OThin-Plate using Thermal Oxidation

The copper oxide plate has been used as a visible light photovoltaic panel material. In this research, the process of forming copper oxide on the surface of the copper thin plate is examined. The method used is the thermal oxidation of the copper plate with a thickness of 200-250 μm. Surface evaluation and internal morphological studies of the oxide synthesis process are carried out using SEM, XRD and DTA. DTA analysis results provide information that the process of plating copper plate structure occurs at 370.44°C. XRD analysis on thin oxide plate calcined at 380°C for 1 hour, formed 92.6% Cu₂O and 6.4% CuO. Analysis of surface and morphology, the optimum oxide region formed at 25 μm thickness and internal oxygen attack re aches a maximum depth of 129 μm. The size of the copper oxide aggregate is formed in a nano multiscale particle between 300 - 800 nm. (paper)