Published July 1997 | Version v1
Journal article

Effect of pressure on the electrical resistivity and magnetization of CeScGe

  • 1. Saitama Univ., Urawa (Japan). Dept. of Physics
  • 2. Kumamoto Univ. (Japan). Faculty of Engineering
  • 3. Tokyo Univ. (Japan). Inst. for Solid State Physics (ISSP)
  • 4. TML, National Research Inst. for metals, Tsukuba (Japan)
  • 5. Florida State Univ. and National High Magnetic Field Lab., Tallahassee, FL (United States)
  • 6. Oak Ridge National Lab., TN (United States)
  • 7. Los Alamos National Lab., NM (United States)

Description

Measurement of the magnetization up to H = 30 T at 4.2 K, temperature dependence of magnetic susceptibility and effect of pressure on the electrical resistivity on CeScGe are presented. These results indicate that CeScGe is antiferromagnetic with TN = 46 K. The Neel temperature TN decreases with increasing pressure with the rate of dTN/dP = -0.56 K/kbar. (orig.)

Additional details

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
237-238
Journal Page Range
p. 207-209.
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
45. Yamada conference - 5. international conference on the physics of transition metals (ICPTM-5).
Dates
24-27 Sep 1996.
Place
Osaka (Japan).

Optional Information

Notes
5 refs.