Effect of silver doping on the optical properties of SiC thin films

In this work, pulsed laser deposition technique (PLD) with the Nd: YAG laser (1064 nm, 6 Hz, 500 mJ) had been used to prepare the pure and Ag-doped silicon carbide (SiC) films on the quartz substrates with various dopant ratios (1% wt, 3% wt, 5% wt, and 7% wt) of Ag. The optical absorbance measurements of SiC films have been studied by ultraviolet-visible spectrophotometry (UV–Vis). The optical parameters that calculated are absorbance, transmittance, reflectivity, absorption coefficient, optical energy gap, extinction coefficient, refractive index and complex dielectric constant. The results showed that the absorbance spectrum had been decreased as the doping ratio increasing. The optical energy gap was decreased from (2.62 to 2.02 eV) as the doping ratio increasing. (paper)