Characterization of nanostructured photosensitive (NiS)x(CdS)(1-x) composite thin films grown by successive ionic layer adsorption and reaction (SILAR) route

Highlights: → Thin films of (NiS)x(CdS)(1-x) with variable composition (x = 1 to 0) were deposited onto glass substrates by the successive ionic layer adsorption and reaction (SILAR) method. → The structural, surface morphological and electrical characterizations of the as deposited and annealed films were studied. → The bandgap and activation energy of annealed (NiS)x(CdS)(1-x) film decrease with improvement in photosensitive nature. -- Abstract: Recently ternary semiconductor nanostructured composite materials have attracted the interest of researchers because of their photovoltaic applications. Thin films of (NiS)x(CdS)(1-x) with variable composition (x = 1-0) had been deposited onto glass substrates by the successive ionic layer adsorption and reaction (SILAR) method. As grown and annealed films were characterised by X-ray diffraction, scanning electron microscopy and EDAX to investigate structural and morphological properties. The (NiS)x(CdS)(1-x) films were polycrystalline in nature having mixed phase of rhombohedral and hexagonal crystal structure due to NiS and CdS respectively. The optical and electrical properties of (NiS)x(CdS)(1-x) thin films were studied to determine compsition dependent bandgap, activation energy and photconductivity. The bandgap and activation energy of annealed (NiS)x(CdS)(1-x) film decrease with improvement in photosensitive nature.