Published June 1981
| Version v1
Journal article
Molecular model for interstitial impurities in V2O5
Description
A simple molecular model, including the four nearest vanadium and oxygen neighbours of an interstitial impurity in V2O5, is presented. The main result of the present model calculations are the symmetry of the ground state, and an order of magnitude for the defect level energies with respect to the bottom of the conduction band. These two results allow for an interpretation of the infrared spectrum of V2O5 doped with Cu or alkali-ions. (author)
Additional details
Publishing Information
- Journal Title
- Solid State Commun.
- Journal Volume
- 38
- Journal Issue
- 10
- Series
- Solid State Commun.
- Journal Page Range
- 879-882
- ISSN
- 0038-1098
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 12625847
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMS; BAND THEORY; COPPER; CRYSTAL DOPING; GROUND STATES; IMPURITIES; INFRARED SPECTRA; INTERSTITIALS; MOLECULAR MODELS; OXYGEN; SYMMETRY; VANADIUM; VANADIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY LEVELS; MATHEMATICAL MODELS; METALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; SPECTRA; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; VANADIUM COMPOUNDS