A novel high voltage LIGBT with an n-region in p-substrate

A novel 4 μm thickness drift region lateral insulated gate bipolar transistor with a floating n-region (NR-LIGBT) in p-substrate is proposed. Due to the field modulation from the n-region, the vertical blocking capability is enhanced and the breakdown voltage is improved significantly. Low area cost, high current capability and short turn-off time are achieved because of the high average electric field per micron. Simulation results show that the blocking capability of the new LIGBT increases by about 58% when compared with the conventional LIGBT (C-LIGBT) for the same 100 μm drift region length. Furthermore, the turn-off time is shorter than that of the conventional LIGBT for nearly same blocking capability. (semiconductor devices)