Disorder produced by high-dose implantation in Si

Channeling measurements with MeV 4He ions were used to investigate the disorder distributions produced in <111> and <100> Si samples by implantation at substrate temperatures from -180 to 300 degreeC. The results indicate that for high implantation doses (1015--1016 ions/cm2) a deep stable disordered region is present in both orientations for the samples implanted at temperatures above room temperature but is absent for room-temperature and lower implants. The colors that have been observed on the surface of samples with similar implants are found to be correlated with the thickness of a thin crystalline layer at the surface