Published 1992
| Version v1
Book
In-situ growth of C-axis oriented YBa2Cu3O7-x on silicon with composite buffer layers by plasma enhanced metalorganic chemical
Creators
- 1. Advanced Technology Materials, Inc., Danbury, CT (United States)
Description
This paper reports on YBa2Cu3O7-x thin films which have been grown in-situ on Si (100) with a composite buffer layer of Pt/Ta/ONO (ONO stands for a SiO2/Si3N4/SiO2 trilayer) by plasma enhanced metal organic chemical vapor deposition (PE-MOCVD). X-ray diffraction measurement indicate the c-axis oriented YBa2Cu3O7-x films are formed in-situ at substrate temperatures as low as 650 degrees C on Pt/Ta/ONO/Si. The composite Pt/Ta/ONO provided an adherent metallic interlayer and effectively prevented the interaction between YBa2Cu3O7-x and Si. Four probe resistivity measurement indicate the onset of superconductivity at 92 K and achieved zero resistance at 65 K
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (United States)
- ISBN
- 1-55899-170-0
- Imprint Title
- Proceedings of layered superconductors
- Imprint Pagination
- 929 p.
- Journal Page Range
- p. 419-426.
Conference
- Title
- 1992 Material Research Society (MRS) spring meeting.
- Dates
- 27 Apr - 2 May 1992.
- Place
- San Francisco, CA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24026011
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL REACTION KINETICS; CHEMICAL VAPOR DEPOSITION; CUPRATES; ELECTRIC IMPEDANCE; FABRICATION; GRAIN ORIENTATION; LAYERS; MEASURING METHODS; ORGANOMETALLIC COMPOUNDS; PLATINUM; SILICON NITRIDES; SILICON OXIDES; SUBSTRATES; SUPERCONDUCTING FILMS; SUPERCONDUCTIVITY; TANTALUM; X-RAY DIFFRACTION; YTTRIUM COMPOUNDS
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; COHERENT SCATTERING; COPPER COMPOUNDS; CRYSTAL STRUCTURE; DEPOSITION; DIFFRACTION; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; IMPEDANCE; KINETICS; METALS; MICROSTRUCTURE; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; ORIENTATION; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PLATINUM METALS; PNICTIDES; REACTION KINETICS; SCATTERING; SILICON COMPOUNDS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Secondary number(s)
- CONF-920402--.