Published October 2007 | Version v1
Journal article

Doping of boron carbides with cobalt, using cobaltocene

  • 1. Defense Threat Reduction Agency and the Air Force Institute of Technology, Wright Patterson Air Force Base, OH (United States)
  • 2. University of Nebraska-Lincoln, College of Engineering and Technology, N245 Walter Scott Engineering Center, Lincoln, NE (United States)
  • 3. University of Nebraska, Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, Behlen Laboratory of Physics, P.O. Box 880111, Lincoln, NE (United States)
  • 4. Louisiana State University, Center for Advanced Microstructures and Devices, Baton Rouge, LA (United States)

Description

The decomposition of cobaltocene under low energy electron irradiation appears facile, and evidence suggests that the decomposition products lead to an increase in the carrier concentration in semiconducting boron carbides. Using cobaltocene to introduce dopants, we fabricated a semiconducting boron carbide homojunction. (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1007/s00339-007-4086-6

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing
Journal Volume
89
Journal Issue
1
Series
Special issue on transparent conducting oxides (TCO)
Journal Page Range
p. 195-201
ISSN
0947-8396
CODEN
APAMFC