Published April 2002
| Version v1
Journal article
Fast ion channeling in fullerene crystals
- 1. Fiziko-Tekhnicheskij Inst. im. A.F. Ioffe RAN, Sankt-Peterburg (Russian Federation)
Description
The calculations of the H+ and He+ ions motion with the energies of 200 and 2000 keV in the C60 and K3C60 crystals are accomplished through the Monte Carlo method. The availability of channeling in the (100) and (111) directions is indicated. The main parameters, characterizing the channeling, are determined. It is shown, that the average energy ions are more preferable for registering the channeling in the C60 films
Abstract (Russian)
Методом Монте-Карло выполнены расчеты движения ионов Н+ и Не+ с энергиями 200 и 2000 кэВ в кристаллах C60 и K3C60. Показано наличие каналирования в направлениях (100) и (111). Определены основные параметры, характеризующие каналирование. Показано, что для регистрации каналирования в пленках C60 предпочтительны ионы средних энергийAdditional details
Additional titles
- Original title (Russian)
- Каналирование быстрых ионов в фуллереновых кристаллах
Publishing Information
- Journal Title
- Fizika Tverdogo Tela
- Journal Volume
- 44
- Journal Issue
- 4
- Journal Page Range
- p. 612-615
- ISSN
- 0367-3294
- CODEN
- FTVTAC
Conference
- Title
- 5. International conference. Fullerenes and atomic clusters
- Original Conference Title
- 5. Mezhdunarodnaya konferentsiya. Fullereny i atomnye klastery
- Dates
- 2-6 Jul 2001
- Place
- Saint-Petersburg (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 35008498
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COMPUTERIZED SIMULATION; FULLERENES; GRAIN ORIENTATION; HYDROGEN IONS 1 PLUS; ION CHANNELING; KEV RANGE 100-1000; MONTE CARLO METHOD
- Descriptors DEC
- CALCULATION METHODS; CARBON; CATIONS; CHANNELING; CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; HYDROGEN IONS; IONS; KEV RANGE; MICROSTRUCTURE; NONMETALS; ORIENTATION; SIMULATION
Optional Information
- Notes
- 4 refs., 3 figs., 1 tab.