Published 1990
| Version v1
Miscellaneous
Study of temperature influence on growth by MBE in GaAs layers crystallinity
- 1. Sao Paulo Univ., Sao Carlos, SP (Brazil). Inst. de Fisica e Quimica
- 2. Universidade Estadual de Campinas, SP (Brazil). Inst. de Fisica
Description
Published in summary form only
Availability note (English)
Available from the Library of Comissao Nacional de Energia Nuclear, RJ, Brazil.Additional details
Additional titles
- Original title (Portuguese)
- Estudo da influencia da temperatura de crescimento por MBE na cristalinidade das camadas de GaAs
Publishing Information
- Imprint Title
- Proceedings of the 13. National Meeting on Condensed Matter Physics
- Imprint Pagination
- 284 p.
- Journal Page Range
- p. 227.
Conference
- Title
- 13. National Meeting on Condensed Matter Physics.
- Dates
- 8-12 May 1990.
- Place
- Caxambu, MG (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 22039742
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract, Non-conventional Literature
- Descriptors DEI
- CRYSTAL GROWTH; EPITAXY; GALLIUM ARSENIDES; RAMAN SPECTROSCOPY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; LASER SPECTROSCOPY; PNICTIDES; SPECTROSCOPY
Optional Information
- Notes
- Imprint:Anais do 13. Encontro Nacional de Fisica da Materia Condensada.