Published November 1987
| Version v1
Miscellaneous
High dose implantation of Zn in c-axis sapphire (α-Al2O3)
Creators
- 1. Royal Melbourne Inst. of Tech. (Australia). Dept. of Applied Physics
- 2. Royal Melbourne Inst. of Tech. (Australia). Microelectronics Technology Centre
Description
Changes in the amorphous layer, produced by high dose implantation of Zn ions into sapphire, upon annealing are studied. While for lower doses of implantation the amorphous layer converts to γ-phase at 800 deg C before regrowth of the α-phase occurs, it is seen that there is a critical dose of Zn above which the amorphous layer does not change but instead shows loss of Zn from the surface
Additional details
Publishing Information
- Publisher
- AINSE.
- Imprint Place
- Lucas Heights (Australia)
- Imprint Title
- Fifth Australian conference on nuclear techniques of analysis : proceedings
- Imprint Pagination
- 266 p.
- Journal Page Range
- p. 125-127.
- Report number
- INIS-mf--11495
Conference
- Title
- 5. Australian conference on nuclear techniques of analysis.
- Dates
- 4-6 Nov 1987.
- Place
- Lucas Heights (Australia).
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 20059725
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; ION IMPLANTATION; SAPPHIRE; ZINC
- Descriptors DEC
- CORUNDUM; ELEMENTS; METALS; MINERALS; OXIDE MINERALS