Published 2006 | Version v1
Miscellaneous Open

Topographic Investigation of SiC Crystals

  • 1. Institute of Electronic Materials Technology, Warsaw (Poland)
  • 2. Institute of Atomic Energy, Otwock-Swierk (Poland)
  • 3. HASYLAB at DESY, Hamburg (Germany)

Description

no abstract available

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Part of:
Annual Report 2005

Additional details

Publishing Information

Imprint Place
Otwock-Swierk (Poland)
Imprint Title
Annual Report 2005
Imprint Pagination
124 p.
Journal Page Range
p. 61
ISSN
1507-5478
Report number
INIS-PL--2006-0009

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
37103133
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Progress Report
Descriptors DEI
CRYSTAL STRUCTURE; DEFORMATION; ELECTRON MICROSCOPY; OPTICAL MICROSCOPY; PROGRESS REPORT; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; TESTING; X-RAY DIFFRACTION
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; COHERENT SCATTERING; DIFFRACTION; DOCUMENT TYPES; MATERIALS; MICROSCOPY; SCATTERING; SILICON COMPOUNDS

Optional Information

Notes
1 fig.