Published October 2001
| Version v1
Journal article
Effects of stoichiometry on the field emission from AlxGa1-xN
Description
The stoichiometric dependence of the field emission from AlxGa1-xN is investigated. The material parameters of AlxGa1-xN are obtained as weighted averages of those of AlN and GaN. The obtained parameters are used to calculated the field emission current density j as a function of the stoichiometric composition x. The results for j show a strong dependence of the field emission on x, which reflects the x-dependences of the electron affinity and the carrier concentration. The field emission current density j increases with increasing x in the region of x≤ 0.4, but becomes constant for x > 0.4. In the saturated region, the carrier concentration is found to be a major factor in determining j from AlxGa1-xN
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 39
- Journal Issue
- 4
- Series
- 21 refs, 5 figs
- Journal Page Range
- p. 708-712
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 35028942
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AFFINITY; ALUMINIUM NITRIDES; CURRENT DENSITY; ENERGY LEVELS; FIELD EMISSION; GALLIUM NITRIDES; STOICHIOMETRY
- Descriptors DEC
- ALUMINIUM COMPOUNDS; EMISSION; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES