Published February 1987
| Version v1
Journal article
Radiation defects in silicon due to irradiation with γ quanta
Creators
- 1. Ceske Vysoke Uceni Technicke, Prague (Czechoslovakia). Fakulta Elektrotechnicka
- 2. Ceske Vysoke Uceni Technicke, Prague (Czechoslovakia). Fakulta Jaderna a Fysikalne Inzenyrska
- 3. Ustav pro Vyzkum, Vyrobu a Vyuziti Radioisotopu, Prague (Czechoslovakia)
Description
The results are shown of measuring the basic parameters of deep radiation properties in silicon irradiated with gamma quanta from a 60Co source. Basic data were found for radiation centres with deep levels Ec -0.18 eV, Ec -0.25 eV and Ev +0.36 eV. Based on a comparison with studies published by other authors, the nature is discussed of the deep radiation centres observed and relations are pointed out between radiation damage and the parameters of the starting material. (author). 4 figs., 1 tab., 16 refs
Additional details
Additional titles
- Original title (Czech)
- Radiacni poruchy v kremiku vznikle ozarenim kvanty γ
Publishing Information
- Journal Title
- Slaboproudy Obz.
- Journal Volume
- 48
- Journal Issue
- 2
- Series
- Slaboproudy Obz.
- Journal Page Range
- 77-80
- ISSN
- 0037-668X
- CODEN
- SLOZA
INIS
- Country of Publication
- Czech Republic
- Country of Input or Organization
- Serbia and Montenegro
- INIS RN
- 19021784
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL DEFECTS; GAMMA RADIATION; MEV RANGE 01-10; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON; SILICON DIODES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; IONIZING RADIATIONS; MATERIALS; MEV RANGE; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- English translation available from Nuclear Information Center, 156 16 Prague 5-Zbraslav, Czechoslovakia at US$ 10 per page.