Modification of localized and resonant states at asymmetric short-range defects under hydrostatic compression

Modification of localized and resonant states at asymmetric short-range defects in III-V semiconductors under hydrostatic compression was studied within the kp method. The impurity contribution to the density of states was calculated using the multiband generalization of the Slater-Koster approximation for defects asymmetric along [001], [110], or [111] axes. The transition between resonant and localized states was studied, the mechanism of the appearance and disappearance of a pair of levels under compression was described. The possibility of comparing the calculation results and experimental data was discussed