Published 1997 | Version v1
Journal article Metadata-only

Radiation-induced defects formation in Bi-containing vitreous chalcogenides

Creators

  • 1. Institute of Materials, Lvov (Ukraine)

Description

Processes of formation and annihilation of coordination defects in As2Se3Biy and (As2Se3)(Bi2Se3)y amorphous chalcogenide semiconductors induced by influence of Co60 gamma-irradiation are investigated by photoelectric spectroscopy method. It is obtained that radiation-induced changes of photoelectrical properties on bioconcentration of As2Se3Biy glasses are characterized by anomalous concentration dependence. The nature of this effect is associated with diamagnetic coordination defects formation. (author). 19 refs, 3 figs

Additional details

Publishing Information

Journal Title
Materialy Elektroniczne
Journal Volume
25
Journal Issue
1
Journal Page Range
p. 31-37.
ISSN
0209-0058
CODEN
MAELDK

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
28072928
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ARSENIC; BISMUTH; CHALCOGENIDES; CHEMICAL COMPOSITION; CRYSTAL DEFECTS; GAMMA RADIATION; PHOTOELECTRIC EMISSION; PHYSICAL RADIATION EFFECTS; SELENIUM; SEMICONDUCTOR MATERIALS
Descriptors DEC
CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELECTRON EMISSION; ELEMENTS; EMISSION; IONIZING RADIATIONS; MATERIALS; METALS; PHOTOELECTRIC EFFECT; RADIATION EFFECTS; RADIATIONS; SEMIMETALS