Published September 2018
| Version v1
Journal article
Structural and band gaps studies of novel Al2-xHfxO3 materials toward MOS applications
- 1. School of Physics and Material Studies, Faculty of Applied Sciences, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)
- 2. Centre for Nanomaterials Research, Institute of Science, Level 3 Block C, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)
- 3. Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, 215123, Suzhou, Jiangsu (China)
Description
Highlights: • Novel Al2-xHfxO3 materials have been obtained via a combustion method. • Cell parameters of Al2-xHfxO3 materials increases as the Hf content increases. • Al2-xHfxO3 materials exhibited band gap narrowing with respect to pure Al2O3.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.matchemphys.2018.03.093Additional details
Identifiers
- DOI
- 10.1016/j.matchemphys.2018.03.093;
- PII
- S0254058418305157;
Publishing Information
- Journal Title
- Materials Chemistry and Physics
- Journal Volume
- 216
- Journal Page Range
- p. 237-242
- ISSN
- 0254-0584
- CODEN
- MCHPDR
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49097040
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM OXIDES; COMBUSTION; HYDROFLUORIC ACID; MATERIALS; SILICON OXIDES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; FLUORINE COMPOUNDS; HALOGEN COMPOUNDS; HYDROGEN COMPOUNDS; INORGANIC ACIDS; INORGANIC COMPOUNDS; OXIDATION; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; THERMOCHEMICAL PROCESSES
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.