Published April 2, 2010
| Version v1
Journal article
Semiconductor optical amplifiers grown on a metamorphic substrate for long wavelength applications
Creators
- 1. Engineering Physics McMaster University, Hamilton, ON, L8S 4L7 (Canada)
Description
A semiconductor optical amplifier is grown on an InAsP metamorphic substrate to extend the long wavelength accessibility of the amplifier. The amplifier is shown to produce gain at wavelength exceeding 1640 nm while containing large tensile strain in the quantum wells. Also a laser diode is fabricated from the same device structure.
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/21/13/134005Additional details
Identifiers
- DOI
- 10.1088/0957-4484/21/13/134005;
- PII
- S0957-4484(10)29511-9;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 21
- Journal Issue
- 13
- Journal Page Range
- [4 p.]
- ISSN
- 0957-4484
Conference
- Title
- Meeting on Nano and Giga Challenges in Electronic and Photonics; 14. Canadian Semiconductor Technology Conference
- Acronym
- NGC/CSTC2009
- Dates
- 10-14 Aug 2009
- Place
- Hamilton, ON (Canada)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43022058
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMPLIFIERS; ARSENIC COMPOUNDS; GAIN; INDIUM COMPOUNDS; LASERS; PHOSPHORUS COMPOUNDS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; STRAINS; SUBSTRATES; WAVELENGTHS
- Descriptors DEC
- AMPLIFICATION; ELECTRONIC EQUIPMENT; EQUIPMENT; MATERIALS; NANOSTRUCTURES