Backscattering measurements of postimplantation demage profiles in silicon single crystals

Silicon single crystals, implanted by He+, B+, Si+ and Ag+ ions, were investigated by backscattering-channelling method. Alpha particles accelerated in the Institute of Nuclear Physics C-48 cyclotron to the energy of 1.4 MeV were used. In order to obtain the radiation damage depth distribution backscattering yields were analysed by means of the three scattering modes, namely: single, multiple, and plural scattering. It was shown that the plural scattering provides the most reasonable results and this scattering mode was applied to analyse all the experimental data. (author)