Published September 2016
| Version v1
Journal article
Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures
Creators
- 1. Peter the Great Saint-Petersburg Polytechnic University (Russian Federation)
- 2. Russian Academy of Sciences, Saint Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation)
- 3. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Description
The possibility of identifying DNA oligonucleotides deposited onto the region of the edge channels of silicon nanostructures is considered. The role of various THz (terahertz) radiation harmonics of silicon nanostructures in the resonance response of oligonucleotides is analyzed. In particular, this makes it possible to compare single-stranded 100- and 50-mer DNA oligonucleotides. A technique for the rapid identification of different oligonucleotides by measuring changes in the conductance and transverse potential difference of silicon nanostructures with microcavities, embedded in the edge channels for selecting THz radiation characteristics, is proposed.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 50
- Journal Issue
- 9
- Journal Page Range
- p. 1208-1215
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48098362
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; ELECTRIC CONDUCTIVITY; HARMONICS; NANOSTRUCTURES; OLIGONUCLEOTIDES; RESONANCE; SILICON; SURFACES; THZ RANGE
- Descriptors DEC
- DNA; ELECTRICAL PROPERTIES; ELEMENTS; EVALUATION; FREQUENCY RANGE; NUCLEIC ACIDS; ORGANIC COMPOUNDS; OSCILLATIONS; PHYSICAL PROPERTIES; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2016 Pleiades Publishing, Ltd.