Published September 2016 | Version v1
Journal article

Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures

  • 1. Peter the Great Saint-Petersburg Polytechnic University (Russian Federation)
  • 2. Russian Academy of Sciences, Saint Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation)
  • 3. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

Description

The possibility of identifying DNA oligonucleotides deposited onto the region of the edge channels of silicon nanostructures is considered. The role of various THz (terahertz) radiation harmonics of silicon nanostructures in the resonance response of oligonucleotides is analyzed. In particular, this makes it possible to compare single-stranded 100- and 50-mer DNA oligonucleotides. A technique for the rapid identification of different oligonucleotides by measuring changes in the conductance and transverse potential difference of silicon nanostructures with microcavities, embedded in the edge channels for selecting THz radiation characteristics, is proposed.

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
50
Journal Issue
9
Journal Page Range
p. 1208-1215
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
48098362
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
COMPARATIVE EVALUATIONS; ELECTRIC CONDUCTIVITY; HARMONICS; NANOSTRUCTURES; OLIGONUCLEOTIDES; RESONANCE; SILICON; SURFACES; THZ RANGE
Descriptors DEC
DNA; ELECTRICAL PROPERTIES; ELEMENTS; EVALUATION; FREQUENCY RANGE; NUCLEIC ACIDS; ORGANIC COMPOUNDS; OSCILLATIONS; PHYSICAL PROPERTIES; SEMIMETALS

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Copyright
Copyright (c) 2016 Pleiades Publishing, Ltd.