Published February 2001
| Version v1
Journal article
Study of emission recombination in GaAs/AlxGa1-xAs heterostructures with single quantum well
Description
The photoluminescence spectra of the GaAs/AlxGa1-xAs traditional and nontraditional heterostructures with singular quantum wells (QW) are studied. The nature of a number of bands and lines is established. The phenomenon of strengthening radiation from the upper polariton branches is identified and studied. It is established, that the energy state of the maxima of the QW radiation bands in both heterostructures is qualitatively described by the known theory. It is found that the barrier layers render certain impact on the quality of the applied QW
Abstract (Russian)
Исследованы спектры фотолюминесценции традиционных и нетрадиционных гетероструктур GaAs/AlxGa1-xAs с одиночными квантовыми ямами (КЯ). Установлена природа ряда полос и линий. Зарегистрированы и исследованы флуктуации ширин КЯ. Выявлено и исследовано явление усиления излучения с верхней поляритонной ветви. Установлено, что энергетическое положение максимумов полос излучения КЯ обеих гетероструктур качественно описывается известной теорией. Найдено, что на качество использованных КЯ оказывают определенное влияние барьерные слоиAdditional details
Additional titles
- Original title (Russian)
- Исследование излучательной рекомбинации в гетероструктурах GaAs/Ал
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk. Rossijskaya Akademiya Nauk. Seriya Fizicheskaya
- Journal Volume
- 65
- Journal Issue
- 2
- Journal Page Range
- p. 223-226
- ISSN
- 1026-3489
- CODEN
- IRAFEO
Conference
- Title
- International workshop on nanofotoniks
- Original Conference Title
- Mezhdunarodnoe soveshchanie po nanofotonike
- Dates
- 20-23 Mar 2000
- Place
- Nizhnij Novgorod (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 33013074
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM COMPOUNDS; AMPLIFICATION; ARSENIC COMPOUNDS; EMISSION SPECTRA; GALLIUM COMPOUNDS; HETEROJUNCTIONS; MOS TRANSISTORS; PHOTOLUMINESCENCE; QUANTUM ELECTRONICS; RECOMBINATION
- Descriptors DEC
- EMISSION; LUMINESCENCE; PHOTON EMISSION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SPECTRA; TRANSISTORS
Optional Information
- Notes
- 10 refs., 3 figs.