Published 1989 | Version v1
Book Metadata-only

Ionizing radiation effects in MOS devices and circuits

Creators

  • 1. Dept. of Electrical Engineering, Yale Univ., New Haven, CT (USA)
  • 2. Sandia National Labs., Albuquerque, NM (USA)

Description

This book presents an overview on the impact of ionizing radiation on metal-oxide-semi-conductor (MOS) devices and integrated circuits. Topics covered include Radiation-induced interface traps and Process-induced radiation effects

Availability note (English)

John Wiley and Sons Inc., 605 Third Avenue, New York, NY 10150 (USA).

Additional details

Publishing Information

Publisher
John Wiley and Sons Inc.
Imprint Place
New York, NY (USA)
ISBN
0-471-84893-X
Imprint Pagination
587 p.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
21087484
Subject category
S42: ENGINEERING; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Quality check status
Yes
Descriptors DEI
ELECTRONIC CIRCUITS; IONIZING RADIATIONS; IRRADIATION; PHYSICAL RADIATION EFFECTS; SILICON; SILICON OXIDES;
Descriptors DEC
CHALCOGENIDES; ELEMENTS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS;