Published 1988 | Version v1
Book Metadata-only

Applications of Moessbauer spectroscopy to characterize highly doped semiconductors

Creators

  • 1. Aarhus Univ. (Denmark). Inst. of Physics

Description

Silicon can be doped with electrically active donors (P, As, Sb) to levels exceeding solid-solubility limits by means of laser- or incoherent-light annealing techniques applied to ion-implanted, amorphized layers. Moessbauer spectroscopy utilizing additionally implanted (radioactive) probe atoms has been employed to characterize some properties of highly doped material. Recent examples are given of the type of microscopic information obtained from such studies. 12 refs.; 4 figs

Additional details

Publishing Information

Publisher
Kluwer Academic.
Imprint Place
Dordrecht (Netherlands)
ISBN
90-247-3703-6
Imprint Title
Nuclear physics applications on materials science
Imprint Pagination
468 p.
Journal Volume
144
Series
NATO ASI Series E.;Applied Sciences.
Journal Page Range
p. 167-172.

Conference

Title
NATO Advanced Science Institute on nuclear physics applications on materials science.
Dates
6-18 Sep 1987.
Place
Viana do Castelo (Portugal).

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
19096820
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
ANTIMONY 121; DOPED MATERIALS; EXPERIMENTAL DATA; LECTURES; MOESSBAUER EFFECT; SEMICONDUCTOR MATERIALS; SILICON; TIN 119
Descriptors DEC
ANTIMONY ISOTOPES; DATA; DAYS LIVING RADIOISOTOPES; DOCUMENT TYPES; ELEMENTS; EVEN-ODD NUCLEI; INFORMATION; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTO; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MATERIALS; NUCLEI; NUMERICAL DATA; ODD-EVEN NUCLEI; RADIOISOTOPES; SEMIMETALS; STABLE ISOTOPES; TIN ISOTOPES

Optional Information

Notes
Imprint:Includes index.
Collaborations
ISOLDE Collaboration, CERN, Geneva, Switzerland.