Published November 2004
| Version v1
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The ultrasonic field effect on the diffusion activation of lithium in silicon
- 1. Physical-technical inst., Tashkent (Uzbekistan)
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no abstract available
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Additional details
Additional titles
- Original title (Russian)
- Влияние ультразвукового поля на активацию диффузии лития в кремнии
Publishing Information
- Publisher
- Nauchno-proizvodstvennoe ob'edinenie 'Fizika-Solntse'
- Imprint Place
- Tashkent (Uzbekistan)
- Imprint Title
- Proceedings of international conference dedicated to the ninetieth anniversary of academician S.A. Azimov 'Fundamental and applied problems of physics'
- Imprint Pagination
- 506 p.
- Journal Page Range
- p. 334-335
- Report number
- INIS-UZ--132
Conference
- Title
- International conference dedicated to the 19. anniversary of academician S.A. Azimov 'Fundamental and applied problems of physics'
- Original Conference Title
- Mezhdunarodnaya konferentsiya, posvyashchennaya 90-letiyu akademika S.A. Azimova 'Fundamental'nye i prikladnye voprosy fiziki'
- Dates
- 18-19 Nov 2004
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 39110737
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CRYSTAL GROWTH; DIFFUSION; JUNCTION DETECTORS; LITHIUM; P-N JUNCTIONS; P-TYPE CONDUCTORS; SILICON; TEMPERATURE DEPENDENCE; ULTRASONIC WAVES
- Descriptors DEC
- ALKALI METALS; ELEMENTS; MATERIALS; MEASURING INSTRUMENTS; METALS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SOUND WAVES
Optional Information
- Notes
- 2 refs.,1 fig. Imprint:Trudy mezhdunarodnoj konferentsii, posvyashchennoj 90-letiyu akademika S.A. Azimova 'Fundamental'nye i prikladnye voprosy fiziki'