Published November 1, 1994 | Version v1
Journal article

Dynamically assisted interlayer hopping in YBa2Cu3O6+x

  • 1. Department of Physics and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
  • 2. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

Description

We report evidence from c-axis-polarized Raman scattering and optical-reflectivity measurements that doping-induced and phonon-mediated changes in the O(4)-Cu(1)-O(4) structure influence c-axis charge dynamics in YBa2Cu3O6+x. With increased doping, we observe a rapid increase in the interbilayer hopping rate which we suggest may be caused by the systematic decrease in the Cu(2)-O(4) bond length. Also, c-axis-polarized Raman scattering measurements provide evidence that dynamical modulation of the O(4)-Cu(2) bond length by c-axis phonons contributes to ''assisted'' interbilayer hopping

Additional details

Publishing Information

Journal Title
Physical Review. B, Condensed Matter
Journal Volume
50
Journal Issue
18
Journal Page Range
p. 13898-13901.
ISSN
0163-1829
CODEN
PRBMDO